Notwithstanding prior reports of problems with its 2nm GateAllAround (GAA) technology, Samsung is supposedly proceeding with its next generation Exynos 2600 chipset and starting mass production. The several departments of the company are supposed to be working hard to boost output returns and control expenses effectively. Samsung's 2nm GAA yields were originally believed to be around 30 percent. Still, there's a deliberate attempt to radically increase this number. Though trial manufacture for the Exynos 2600 was first scheduled for May, it seems any early problems have been ironed out, therefore enabling the flagship SystemonChip (SoC) to start mass production. A NewDaily report states that Samsung's LSI and foundry divisions are working to improve the Exynos 2600's performance and manufacturing efficiency. The target since last month has been reportedly a 50% yield, a significant rise from the 30% seen at the beginning of the year, all while guaranteeing the performance of the chip isn't affected. Industry professionals recommend Samsung must get yields of at least 70 percent for mass manufacture to be really sustainable. Samsung underlined the need of stabilizing its 2nm GAA returns during its first-quarter profits report for 2025. Seeking to draw big customers to its advanced manufacturing method, the company hopes to start large-scale production in the second part of 2025. Samsung is also allegedly producing Qualcomm's Snapdragon 8 Elite Gen 2 for Galaxy utilizing its 2nm GAA technology, according to unconfirmed rumors. Samsung should enter a risk production phase for the Exynos 2600 after the present mass production of the prototype. Official production of the SoC might start just two to three months before the expected Galaxy S26 series debut, likely in February next year, should development proceed smoothly. Samsung has a chance to land important clients as rival TSMC is said to be accepting 2nm wafer orders since April. But for the Korean tech behemoth to seize its advancement and prevent missing out on important relationships, fast and decisive action will be absolutely essential.

NVIDIA's Jensen Huang said during a Q&A session at GTC 2025 that he expects GAA to be 20% better than the current FinFET technology.

Rapidus Corporation has recently announced a pivotal achievement: the successful prototyping of 2nm Gate-All-Around (GAA) transistors at its Innovative Integration for Manufacturing (IIM-1) foundry (Figure 1). This milestone is particularly significant as the prototype wafers have also begun to exhibit their electrical characteristics, validating the fundamental functionality of these advanced semiconductor structures. The company has maintained a swift development timeline, aiming for mass production by 2027.