Des nanotransistors à la médecine personnalisée, des objets connectés aux promesses – et risques – de la génétique, la science des nanotechnologies redéfinit les frontières du possible. Plongée dans c...

The need for precise control of nanoscale geometric features poses a challenge in manufacturing advanced gate-all-around nanotransistors. The high material sele

Des nanotransistors à la médecine personnalisée, des objets connectés aux promesses – et risques – de la génétique, la science des nanotechnologies redéfinit les frontières du possible. Plongée dans c...

Recent experiments have shown the possibility of tuning the transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: an unconventional electric field-effect or quasiparticle injection. Here, we provide conclusive evidence for the electrostatic-field-driven control of the supercurrent in metallic nanosized superconductors, by realizing ionic-gated superconducting field-effect nanotransistors (ISFETs) where electron injection is impossible. Our Nb ISFETs show giant suppression of the superconducting critical current of up to 45%. Moreover, the bipolar supercurrent suppression observed in different ISFETs, together with invariant critical temperature and normal-state resistance, also excludes conventional charge accumulation/depletion. Therefore, the microscopic explanation of this effect calls upon a novel theory able to describe the nontrivial interaction of static electric fields with conventional superconductivity.

Tunnel Field-Effect Transistor Market Size is expected to grow USD 7.26 Billion by 2035, Global Tunnel Field-Effect Transistor Industry Analysis by Application, Material Type, End Use Industry, Config...