NoMIS to lead SiC device-level packaging and supply 3.3 kV SiC MOSFETs including its upcoming 25 mΩ device. The 3.3 kV portfolio is also available to other DC-GRIDS teams. ALBANY, N.Y., May 15, 2026 /PRNewswire/ — NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced its participation as an industry partner in a three-year, $2.5 million project led by Michigan State University (PI: Dr. Omid Beik) to develop high-voltage SiC-based Neutral Point Clamped Power Electronics Building Blocks (NPC-PEBBs) as vendor-agnostic, plug-and-play submodules for modular valves in multiport multiterminal HVDC (MT-HVDC) converters. The project was […]

SiC on Insulator Substrate Market is expected to grow at 11.62% CAGR, reaching $3.87 Billion by 2035 | advancements in semiconductor technology and increasing demand for energy-efficient devices.