Nonfilamentary nonvolatile memory devices have been constrained by limited data retention performance. In this work, we demonstrate a Ta2O5 memory device that is not only both nonfilamentary and nonvolatile but also retains information for over 22 h at 190°C. We demonstrate both bulk compositional changes during switching as well as area-dependent switching behavior.

Organic field-effect transistor simulation, Bottom-gate top-contact architecture, High-k ta2o5 dielectric, Silvaco Atlas tcad modeling

arXiv abstract link

arXiv abstract link

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Brunswick Exploration (BRW) announced a maiden MRE for its Mirage Li project in the James Bay region of Quebec. The MRE outlined an inferred resource of 52.2Mt at 1.08% Li2O and 131ppm Ta2O5, for 563kt contained Li2O (~1.4Mt LCE) at a cutoff grade of 0.50% Li2O. In our view, this is a robust starter MRE which positions Mirage as one of the largest undeveloped hard rock lithium projects in the Americas. This is a shallow resource with significant growth potential, both around the current MRE pit and at other regional targets. Brunswick has also outlined an exploration target of an additional 40-50Mt, which, if achieved, would position Mirage in the league of premier Canadian Li projects such as PMET’s (TSX:PMET, Not Rated) 140Mt Shaakichiuwaanaan project, also in the James Bay region. With spodumene prices on the rise again, we remind investors that Mirage is located in a Tier 1 jurisdiction, and the near-surface nature of the deposit with its simple metallurgy, and proximity to existing infrastructure, make Brunswick a very attractive Li play, in our opinion.

Penta dimethylamino tantalum commonly abbreviated PDMAT is a high purity organotantalum precursor used primarily in atomic layer deposition ALD and chemical vapor deposition CVD to produce tantalum nitride TaN and tantalum oxide Ta2O5 thin films for barrier layers gate dielectrics ...

**Keywords:** 음의 열팽창 (NTE), 결정학적 결함, 격자 진동 스펙트럼, 밀도 범함수 이론 (DFT), 머신 러닝, 예측 모델, 재료 설계 **1. 서론** 음의 열팽창 (Negative Thermal Expansion, NTE)은 물질의 온도가 증가함에 따라 부피가 감소하는 현상으로, 기존 재료의 열적 안정성을 향상시키거나 에너지 효율적인 시스템을 개발하는데 활용될 수 있는 혁신적인 특성입니다. 현재까지 알려진 NTE를 나타내는 재료들은 주로 ZrW2O8, Ta2O5, TiO2, FeS2 등 특정 화학 조성과 결정 구조를 가진 화합물에 국한되어 있습니다.

Ta3N5 film is prepared by high-temperature nitridation of the Ta2O5 film deposited on the Nb substrate via electron beam evaporation, while the TaN film is prep

Zhang et al. report a self-rectifying memristor (SRM) with a Ta2O5/IGZO heterostructure that suppresses leakage currents by >104 with multilevel programming in a 32 × 32 crossbar array. The SRM array exhibits NIST-validated randomness with 16 distinct conductance states and a stochastic temporal decay (τ ≈ 25 s), achieving an intra-hamming distance (HD) below 0.03% and a near-ideal inter-HD of 50.001% for binary and quaternary PUFs.