Sandisk is sampling BiCS10 1Tb TLC 3D NAND, with claimed gains in density, speed and power efficiency for data-intensive workloads.

Kioxia and Sandisk have started sampling BiCS10, a 332-layer TLC NAND generation built for denser, faster, lower-power SSDs in AI-heavy data centers.

Sandisk showcased next-generation NAND and High Bandwidth Flash at FMS 2026, targeting AI inference workloads in data centres and cloud.

A Kioxia e a SanDisk revelaram a memória flash de maior densidade do mundo durante a conferência Future of Memory and Storage. Trata-se do novo componente 3D QLC NAND de décima geração, batizado de BiCS10, que integra 332 camadas ativas e atinge velocidades de transferência até 4.800 MT/s, marcando

Kioxia and Sandisk’s 332-layer BiCS10 QLC NAND is not an SSD launch, but it offers a clear look at how future AI and cloud storage could pack more capacity into every rack.

Sandisk hat jüngst weitere Details über die neuen NAND-Generationen BiCS9 und BiCS10 verraten sowie eine Roadmap mit BiCS11 gezeigt.

Sandisk shares rose as the company unveiled its AI storage roadmap, BiCS10 & HBF tech, durable deals, and a FY2028-30 plan targeting high teens growth, 80% margins, and 100% excess cash returns.

Sandisk (Nasdaq: SNDK) used its 2026 Investor Day, “Sandisk In Focus,” to outline a long-term growth strategy centered on NAND innovation, AI-driven storage demand and a new business model built on long-term customer agreements. The company highlighted its CMOS directly Bonded to Array (CBA) platform, a two‑dimensional scaling strategy and new BiCS9 and BiCS10 QLC nodes, including a BiCS10 QLC node with a 60% increase in bit density versus BiCS8.Sandisk detailed durable New Business Model (NBM) agreements with eight customers, expected to represent about 50% of bits in FY2027 and roughly two‑thirds in FY2028. For FY2028–FY2030, Sandisk’s financial model targets mid‑to‑high‑teens revenue growth, non‑GAAP gross margin of about 80%, operating margin around 75% and adjusted free cash flow margin near 50%, while planning to return 100% of excess cash to shareholders after funding growth investments.

A Kioxia és a Sandisk bemutatta a 332 rétegű BiCS10 3D QLC NAND eszközt, amely kiemelkedő adatsűrűséget kínál az adatközpontok számára.

As the parameter scale of generative AI models expands and context windows continuously lengthen, Agentic AI applications are rapidly emerging. Consequently, the developmental bottleneck of AI computing architectures has shifted dramatically. It has moved away from pure GPU processing power toward the absolute limits of memory capacity and bandwidth. At this year's Future Memory and Storage (FMS 2026) conference, SanDisk announced a comprehensive series of…

Descubre cómo la nueva memoria BiCS10 QLC de Kioxia y Sandisk revoluciona el almacenamiento con 332 capas y gran densidad tecnológica.

Kioxia and Sandisk debut BiCS10 3D QLC NAND with 332 layers and 37 Gb/mm2 density, targeting high-performance data center storage.

Kioxia y Sandisk han lanzado oficialmente sus NAND Flash de nueva generación BiCS10, tanto en TLC como en QLC para el mercado de la IA.

エルミタージュ秋葉原

Kioxia and SanDisk just broke the density record for QLC NAND, hitting 37 Gb/mm² with their BiCS10 tech. But the real game-changer is HBF: a new memory layer between HBM and SSDs to kill AI bottleneck

Kioxia and Sandisk introduce BiCS10 3D QLC NAND device with a record areal density of over 37 Gbit/mm^2.

新一代3D NAND記憶體正邁入超過300層堆疊的新領域，SanDisk與KIOXIA共同公布BiCS10第10代3D NAND，基於QLC架構，以332層堆疊實現高達37Gb/mm²的高密度，較現行第8代3D快閃記憶體單位密度高出60%。創新設計兼具性能與低功耗▲SanDisk與KIOXIA的第10代3D NAND透過超過300層堆疊，單位密度大舉提升60%SanDisk與KIOXIA的第10代3D NAND採用創新的CMOS CBA(直接鏈接陣列)，透過把CMOS邏輯電路與儲存電路配置在不同晶圓進行高精度鏈接，此外藉由Toggle DDR6.0與SCA(獨立命令位址)，創下QLC 3D N

Kioxia lässt nicht nur den BiCS10-Flash bemustern, sondern auch den Roadmap-Querableger BiCS9. Neue Samples des Typs UFS 5.0 gibt es auch.