In this paper is proposed a double-gate FeFET cell that can emulate the dynamics of both astrocytes and dendrites within neuromorphic architectures.
arxiv.org/pdf/2504.14466
arxiv.org/pdf/2504.14466
April 23, 2025 at 6:47 AM
In this paper is proposed a double-gate FeFET cell that can emulate the dynamics of both astrocytes and dendrites within neuromorphic architectures.
arxiv.org/pdf/2504.14466
arxiv.org/pdf/2504.14466
This work demonstrates interesting applications that are enabled by the DG FeFET, including self-healing, dragonfly prey interception, and homeostasis, paving the way forward for developing truly ”brain-like” neuromorphic hardware.
April 23, 2025 at 6:47 AM
This work demonstrates interesting applications that are enabled by the DG FeFET, including self-healing, dragonfly prey interception, and homeostasis, paving the way forward for developing truly ”brain-like” neuromorphic hardware.
Researchers have proposed a 4T-reconfigurable FeFET-based differential nvSRAM bit-cell design based on conventional FeFETs without any additional fabrication process requirements, achieving comparable performance to CMOS SRAM and other nvSRAMs.
arxiv.org/pdf/2606.19918
arxiv.org/pdf/2606.19918
June 22, 2026 at 3:46 AM
Researchers have proposed a 4T-reconfigurable FeFET-based differential nvSRAM bit-cell design based on conventional FeFETs without any additional fabrication process requirements, achieving comparable performance to CMOS SRAM and other nvSRAMs.
arxiv.org/pdf/2606.19918
arxiv.org/pdf/2606.19918
Tackling #ferroelectric scaling dilemmas for AI-era computing!
A #PKUResearch team reports wafer-scale, uniform, ultrathin van der Waals ferroelectric oxide Bi₂SeO₅—retaining robust ferroelectricity down to monolayer thickness on a parent 2D semiconductor Bi₂O₂Se substrate.
#FeFET @science.org
A #PKUResearch team reports wafer-scale, uniform, ultrathin van der Waals ferroelectric oxide Bi₂SeO₅—retaining robust ferroelectricity down to monolayer thickness on a parent 2D semiconductor Bi₂O₂Se substrate.
#FeFET @science.org
February 1, 2026 at 5:42 PM
Tackling #ferroelectric scaling dilemmas for AI-era computing!
A #PKUResearch team reports wafer-scale, uniform, ultrathin van der Waals ferroelectric oxide Bi₂SeO₅—retaining robust ferroelectricity down to monolayer thickness on a parent 2D semiconductor Bi₂O₂Se substrate.
#FeFET @science.org
A #PKUResearch team reports wafer-scale, uniform, ultrathin van der Waals ferroelectric oxide Bi₂SeO₅—retaining robust ferroelectricity down to monolayer thickness on a parent 2D semiconductor Bi₂O₂Se substrate.
#FeFET @science.org
The results show that TrilinearCIM achieving up to 46.6% energy reduction and 20.4% latency improvement over conventional FeFET CIM at 37.3% area overhead.
April 11, 2026 at 5:23 AM
The results show that TrilinearCIM achieving up to 46.6% energy reduction and 20.4% latency improvement over conventional FeFET CIM at 37.3% area overhead.
[Progress Review]
Integration of ferroelectric devices for advanced in-memory computing concepts
2024 Jpn. J. Appl. Phys. 63 050802
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Review
#Memory
#Ferroelectric
#Neuromorphic
#FeFET
#FeMFET
Integration of ferroelectric devices for advanced in-memory computing concepts
2024 Jpn. J. Appl. Phys. 63 050802
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Review
#Memory
#Ferroelectric
#Neuromorphic
#FeFET
#FeMFET
January 21, 2026 at 3:38 AM
[Progress Review]
Integration of ferroelectric devices for advanced in-memory computing concepts
2024 Jpn. J. Appl. Phys. 63 050802
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Review
#Memory
#Ferroelectric
#Neuromorphic
#FeFET
#FeMFET
Integration of ferroelectric devices for advanced in-memory computing concepts
2024 Jpn. J. Appl. Phys. 63 050802
iopscience.iop.org/article/10.3...
#JJAP
#physics
#Openaccess
#Review
#Memory
#Ferroelectric
#Neuromorphic
#FeFET
#FeMFET
The results show that the Josephson FeFET can be used as a cryogenic superconducting non-volatile single memory cell, maintaining excellent state retention and readout stability over 24 hours of continuous measurement.
July 8, 2025 at 10:27 AM
The results show that the Josephson FeFET can be used as a cryogenic superconducting non-volatile single memory cell, maintaining excellent state retention and readout stability over 24 hours of continuous measurement.
In this paper is presented TrilinearCIM, a Double-Gate FeFET based architecture that uses back-gate modulation to realize a three-operand multiply-accumulate primitive for in-memory attention computation without dynamic ferroelectric reprogramming.
arxiv.org/pdf/2604.07628
arxiv.org/pdf/2604.07628
April 11, 2026 at 5:23 AM
In this paper is presented TrilinearCIM, a Double-Gate FeFET based architecture that uses back-gate modulation to realize a three-operand multiply-accumulate primitive for in-memory attention computation without dynamic ferroelectric reprogramming.
arxiv.org/pdf/2604.07628
arxiv.org/pdf/2604.07628
Ερευνητές στην Κίνα δημιούργησαν το μικρότερο FeFET transistor στον κόσμο με πύλη 1nm. Η τεχνολογία in-memory computing ενοποιεί μνήμη και επεξεργαστή, μειώνοντας δραστικά την κατανάλωση ενέργειας των AI chips.
www.techgear.gr/i-kina-katas...
www.techgear.gr/i-kina-katas...
Η Κίνα κατασκεύασε το μικρότερο transistor στον κόσμο για AI επεξεργαστές
Ερευνητές στην Κίνα δημιούργησαν το μικρότερο FeFET transistor στον κόσμο με πύλη 1nm. Η τεχνολογία in-memory computing ενοποιεί μνήμη και επεξεργαστή, μειώνοντας δραστικά την κατανάλωση ενέργειας των...
www.techgear.gr
February 28, 2026 at 11:14 AM
Ερευνητές στην Κίνα δημιούργησαν το μικρότερο FeFET transistor στον κόσμο με πύλη 1nm. Η τεχνολογία in-memory computing ενοποιεί μνήμη και επεξεργαστή, μειώνοντας δραστικά την κατανάλωση ενέργειας των AI chips.
www.techgear.gr/i-kina-katas...
www.techgear.gr/i-kina-katas...
The DG-FeFET realizes a synapse with a dynamic gain modulation mechanism. This can be leveraged as an analog for a compact astrocyte-tripartite synapse, as well as enabling dendrite-like gain modulation operations.
April 23, 2025 at 6:47 AM
The DG-FeFET realizes a synapse with a dynamic gain modulation mechanism. This can be leveraged as an analog for a compact astrocyte-tripartite synapse, as well as enabling dendrite-like gain modulation operations.
Zephan M. Enciso, et al.: A 185 TOPS/W/mm2 Bayesian Inference Engine with 640 aJ Write-Free FeFET GRNG for Uncertainty-Aware Aerial Search and Rescue https://arxiv.org/abs/2606.10822 https://arxiv.org/pdf/2606.10822 https://arxiv.org/html/2606.10822
June 10, 2026 at 6:38 AM
Zephan M. Enciso, et al.: A 185 TOPS/W/mm2 Bayesian Inference Engine with 640 aJ Write-Free FeFET GRNG for Uncertainty-Aware Aerial Search and Rescue https://arxiv.org/abs/2606.10822 https://arxiv.org/pdf/2606.10822 https://arxiv.org/html/2606.10822
Chińscy naukowcy stworzyli niezwykle mały tranzystor FeFET. To może być kolejny krok w miniaturyzacji elektroniki. 🔬
Chiny chwalą się najmniejszym takim tranzystorem świata. Klucz tkwi nie w rozmiarze, ale w napięciu
Przez lata świat półprzewodników przyzwyczaił nas do prostego schematu, czyli pogoni za coraz to mniejszym procesem technologicznym. Chińscy inżynierowie
www.focus.pl
March 16, 2026 at 6:32 PM
Chińscy naukowcy stworzyli niezwykle mały tranzystor FeFET. To może być kolejny krok w miniaturyzacji elektroniki. 🔬
Smaller, faster, smarter: Chinese transistor ready for future AI chips: Chinese researchers have developed a new ferroelectric transistor (FeFET) designed for future AI chips, integrating memory and processing to mimic brain neuron function and reduce data transfer de… https://ranked.news/221551?u=b
February 25, 2026 at 6:05 AM
Smaller, faster, smarter: Chinese transistor ready for future AI chips: Chinese researchers have developed a new ferroelectric transistor (FeFET) designed for future AI chips, integrating memory and processing to mimic brain neuron function and reduce data transfer de… https://ranked.news/221551?u=b
introduce a compact Double-Gate Ferroelectric Field Effect Transistor (DG-FeFET) cell that can emulate the dynamics of both astrocytes and dendrites within neuromorphic architectures. We demonstrate that with a ferroelectric top gate for synaptic [3/8 of https://arxiv.org/abs/2504.14466v1]
April 22, 2025 at 5:56 AM
introduce a compact Double-Gate Ferroelectric Field Effect Transistor (DG-FeFET) cell that can emulate the dynamics of both astrocytes and dendrites within neuromorphic architectures. We demonstrate that with a ferroelectric top gate for synaptic [3/8 of https://arxiv.org/abs/2504.14466v1]
エネルギー消費を1/10に抑える次世代強誘電体トランジスタ（FeFET）の開発に成功：世界最小1nmゲートがAIチップの限界を突破する xenospectrum.com/sub-1nm-nano...
エネルギー消費を1/10に抑える次世代強誘電体トランジスタ（FeFET）の開発に成功：世界最小1nmゲートがAIチップの限界を突破する | XenoSpectrum
人工知能（AI）の進化が加速する現代において、計算能力の向上と消費電力の削減は、半導体業界が直面する最も切実な課題である。とりわけ、膨大なデータを処理するAIチップは、桁外れの電力を消費しており、そのエネルギー効率の改善 ... <a title="エネルギー消費を1/10に抑える次世代強誘電体トランジスタ（FeFET）の開発に成功：世界最小1nmゲートがAIチップの限界を突破する" class=...
xenospectrum.com
February 25, 2026 at 8:59 PM
エネルギー消費を1/10に抑える次世代強誘電体トランジスタ（FeFET）の開発に成功：世界最小1nmゲートがAIチップの限界を突破する xenospectrum.com/sub-1nm-nano...
![Emoji Legend
💨x# | "Increased Trending Rate" for a Word (meaningful value; "💨x8 - burger" will mean "burger" is trending at 8 times its own normal rate for this time of day)
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[PREVIOUSLY USED]
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vision analysis - Ferroelectric RAM (FeRAM, FeFET) Market Emerging Trends and Growth Opportun sites.google.com/view/visiona...
vision analysis - Ferroelectric RAM (FeRAM, FeFET) Market Emerging Trends and Growth Opportun
Global Ferroelectric RAM (FeRAM, FeFET) Market, valued at a robust US$ 441.8 million in 2026, is on a trajectory of significant expansion, projected to reach US$ 892.4 million by 2034. This growth, re...
sites.google.com
August 10, 2026 at 11:17 AM
vision analysis - Ferroelectric RAM (FeRAM, FeFET) Market Emerging Trends and Growth Opportun sites.google.com/view/visiona...
🏆 Top June 2026 JxCDC papers:
1️⃣ FeFET PIM for DNN (Georgia Tech)
🔗 https://bit.ly/4jpEwIP
2️⃣ CMOS Oscillator Chains (Cornell/Intel)
🔗 https://bit.ly/4etJJjj
3️⃣ Robust RRAM Inference (ASU/IBM)
🔗 https://bit.ly/4acNTYa
#IEEE #CircuitDesign #AIHardware #Semiconductors
1️⃣ FeFET PIM for DNN (Georgia Tech)
🔗 https://bit.ly/4jpEwIP
2️⃣ CMOS Oscillator Chains (Cornell/Intel)
🔗 https://bit.ly/4etJJjj
3️⃣ Robust RRAM Inference (ASU/IBM)
🔗 https://bit.ly/4acNTYa
#IEEE #CircuitDesign #AIHardware #Semiconductors
July 30, 2026 at 3:35 PM
🏆 Top June 2026 JxCDC papers:
1️⃣ FeFET PIM for DNN (Georgia Tech)
🔗 https://bit.ly/4jpEwIP
2️⃣ CMOS Oscillator Chains (Cornell/Intel)
🔗 https://bit.ly/4etJJjj
3️⃣ Robust RRAM Inference (ASU/IBM)
🔗 https://bit.ly/4acNTYa
#IEEE #CircuitDesign #AIHardware #Semiconductors
1️⃣ FeFET PIM for DNN (Georgia Tech)
🔗 https://bit.ly/4jpEwIP
2️⃣ CMOS Oscillator Chains (Cornell/Intel)
🔗 https://bit.ly/4etJJjj
3️⃣ Robust RRAM Inference (ASU/IBM)
🔗 https://bit.ly/4acNTYa
#IEEE #CircuitDesign #AIHardware #Semiconductors
How do we achieve energy-efficient edge AI? Shift away from traditional architectures. 🧠
New paper in IEEE SSC-L from @GeorgiaTech demonstrates a 28-nm FeFET Compute-in-Memory macro hitting a peak efficiency of 346.6 TOPS/W.
Read: https://bit.ly/4yAKqQ2
#IEEESSCS #SSCLetters
New paper in IEEE SSC-L from @GeorgiaTech demonstrates a 28-nm FeFET Compute-in-Memory macro hitting a peak efficiency of 346.6 TOPS/W.
Read: https://bit.ly/4yAKqQ2
#IEEESSCS #SSCLetters
July 23, 2026 at 8:54 PM
How do we achieve energy-efficient edge AI? Shift away from traditional architectures. 🧠
New paper in IEEE SSC-L from @GeorgiaTech demonstrates a 28-nm FeFET Compute-in-Memory macro hitting a peak efficiency of 346.6 TOPS/W.
Read: https://bit.ly/4yAKqQ2
#IEEESSCS #SSCLetters
New paper in IEEE SSC-L from @GeorgiaTech demonstrates a 28-nm FeFET Compute-in-Memory macro hitting a peak efficiency of 346.6 TOPS/W.
Read: https://bit.ly/4yAKqQ2
#IEEESSCS #SSCLetters
نظرة عامة شاملة على تقنيات الذاكرة المتطايرة (SRAM, DRAM) وغير المتطايرة (NAND Flash, RRAM, MRAM, FeFET) مع تحليل التشغيل في درجات حرارة منخفضة جداً لمنصات الحوسبة الفائقة التوصيل والحوسبة الكمية، مع فحص المقايضات في الأداء والطاقة وقابلية التوسع.
تقنيات الذاكرة الناشئة لأنظمة الحوسبة بدرجة حرارة الغرفة والحوسبة فائقة البرودة
arxiv.org
May 22, 2026 at 8:51 AM
نظرة عامة شاملة على تقنيات الذاكرة المتطايرة (SRAM, DRAM) وغير المتطايرة (NAND Flash, RRAM, MRAM, FeFET) مع تحليل التشغيل في درجات حرارة منخفضة جداً لمنصات الحوسبة الفائقة التوصيل والحوسبة الكمية، مع فحص المقايضات في الأداء والطاقة وقابلية التوسع.
Descripción general integral de tecnologías de memoria volátiles (SRAM, DRAM) y no volátiles (NAND Flash, RRAM, MRAM, FeFET) con análisis de operación criogénica para plataformas de superconductores y computación cuántica, examinando compensaciones de rendimiento, energía y es...
Tecnologías de Memoria Emergentes para Sistemas de Computación a Temperatura Ambiente y Criogénica
arxiv.org
May 22, 2026 at 8:48 AM
Descripción general integral de tecnologías de memoria volátiles (SRAM, DRAM) y no volátiles (NAND Flash, RRAM, MRAM, FeFET) con análisis de operación criogénica para plataformas de superconductores y computación cuántica, examinando compensaciones de rendimiento, energía y es...