NoMIS Power Corporation has launched its groundbreaking 6.5 kV SiC MOSFET technology, paving the way for advancements toward 10 kV and 20 kV IGBTs and high-voltage solutions.

NoMIS Power Corporation joins the DC-GRIDS Consortium to enhance HVDC technology with its 3.3 kV SiC MOSFETs. This partnership emphasizes sustainable energy solutions.

NoMIS Power Corporation launches its 3.3 kV SiC MOSFET, advancing efficiency and reliability in medium-voltage applications including energy storage and transportation.

NoMIS Power has revealed significant advancements in its SiC MOSFET technology, featuring reduced on-resistance and improved performance, facilitating easier integration into existing systems.

NoMIS Power has made significant strides in silicon carbide technology, boosting the short-circuit withstand time of SiC MOSFETs to 5 µs, a vital improvement for high-power applications.

NoMIS Power, a leader in semiconductor technology, has advanced to Phase 2 of the Silicon Carbide Packaging Prize, aiming for innovative breakthroughs.