9月4日(金)13:30-17:00に、グローバルネット㈱がセミナー「GaNデバイスの応用分野と製造の低コスト化」を開催。講演3件。AIデータセンター/サーバー向けパワー半導体、SiC/GaNパワーデバイスの特徴比較、高品質・大口径GaN結晶技術。千代田区六番町・プラザエフおよびオンライン(Zoom)にて。詳細は global-net.co.jp/arc... に。
#Seminar #GaN #SiC #PowerDevice
#Seminar #GaN #SiC #PowerDevice
August 27, 2026 at 11:45 PM
9月4日(金)13:30-17:00に、グローバルネット㈱がセミナー「GaNデバイスの応用分野と製造の低コスト化」を開催。講演3件。AIデータセンター/サーバー向けパワー半導体、SiC/GaNパワーデバイスの特徴比較、高品質・大口径GaN結晶技術。千代田区六番町・プラザエフおよびオンライン(Zoom)にて。詳細は global-net.co.jp/arc... に。
#Seminar #GaN #SiC #PowerDevice
#Seminar #GaN #SiC #PowerDevice
Nexperia Expands Planar #SchottkyDiode Portfolio with 16 Low VF Devices in Compact CFP2-HP Package #powerdevice #powerelectronics
Nexperia Expands Planar Schottky Diode Portfolio with 16 Low VF Devices in Compact CFP2-HP Package
The new planar Schottky diodes provide superior heat dissipation while still maintaining small footprint.
www.powerelectronicsnews.com
April 29, 2025 at 8:30 PM
Nexperia Expands Planar #SchottkyDiode Portfolio with 16 Low VF Devices in Compact CFP2-HP Package #powerdevice #powerelectronics
[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
June 25, 2026 at 11:00 AM
[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
[2025 Open Access]
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
June 22, 2026 at 7:17 AM
[2025 Open Access]
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
[Spotlights 2025]
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
June 21, 2026 at 11:00 AM
[Spotlights 2025]
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
January 31, 2026 at 11:00 AM
[OPEN ACCESS]
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
Ni/rutile GeO2 vertical Schottky barrier diode on Nb-doped TiO2 substrate using Sb-doped graded GeySn1−yO2 buffer layers
2025 Appl. Phys. Express 18 041001
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#rutile
#germanium
#dioxide
#Schottky
#diode
#powerdevice
#CVD
[2025 Open Access]
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
January 29, 2026 at 8:20 AM
[2025 Open Access]
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching
2025 Appl. Phys. Express 18 036503
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#GaN
#powerdevice
#diode
#PEC
#etching
#contactless
#avalanche
#breakdown
#deep
[Spotlights 2025]
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
January 29, 2026 at 3:03 AM
[Spotlights 2025]
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
Ampere-class double pulse testing of half-inch H-terminated diamond MOSFET chip
2025 Appl. Phys. Express 18 036502
iopscience.iop.org/article/10.3...
#APEX
#OpenAccess
#Physics
#Diamond
#Powerdevice
#Double
#pulse
#testing
#MOSFET
QP70 7″ Android Tablet
Specification Model QP70 Operation System Android 12 Screen 7inchLCD capacitive touchscreen - IPS - 10 touch points Resolution 1024 x 600 pixels CPU MTK8168QuadCore 1.4GHz RAM 2GB ROM 32GB Camera Dual camera Front 5.0MP, Rear 8.0MP Wireless Wifi802.11b/g/n G-sensor…
Specification Model QP70 Operation System Android 12 Screen 7inchLCD capacitive touchscreen - IPS - 10 touch points Resolution 1024 x 600 pixels CPU MTK8168QuadCore 1.4GHz RAM 2GB ROM 32GB Camera Dual camera Front 5.0MP, Rear 8.0MP Wireless Wifi802.11b/g/n G-sensor…
QP70 7″ Android Tablet
Specification Model QP70 Operation System Android 12 Screen 7inchLCD capacitive touchscreen - IPS - 10 touch points Resolution 1024 x 600 pixels CPU MTK8168QuadCore 1.4GHz RAM 2GB ROM 32GB Camera Dual camera Front 5.0MP, Rear 8.0MP Wireless Wifi802.11b/g/n G-sensor Support GPS Support Bluetooth Bluetooth 5.0 Power Battery 3000mAhLi-ionBattery WorkingTime 2-3hours PowerDevice ACAdapterInput100/240V DeviceSpecification Color Silver Dimension 190x109x9 mm Weight 250g Multi-Media Video AVI,MP4,FLV,3GP,MKV,WMVetc. Audio MP3,WMA,OGG,AAC,WAVFLACetc. Picture JPG/BMP/PNG/GIF E-Book PDF,TXTetc. Interface 1xType-C USB 1xTF CardSlot 1xEarphoneJack Accessory 1xPC 1xusbcable 1xDCcharger
pokbongroup.store
December 29, 2024 at 7:54 PM
QP70 7″ Android Tablet
Specification Model QP70 Operation System Android 12 Screen 7inchLCD capacitive touchscreen - IPS - 10 touch points Resolution 1024 x 600 pixels CPU MTK8168QuadCore 1.4GHz RAM 2GB ROM 32GB Camera Dual camera Front 5.0MP, Rear 8.0MP Wireless Wifi802.11b/g/n G-sensor…
Specification Model QP70 Operation System Android 12 Screen 7inchLCD capacitive touchscreen - IPS - 10 touch points Resolution 1024 x 600 pixels CPU MTK8168QuadCore 1.4GHz RAM 2GB ROM 32GB Camera Dual camera Front 5.0MP, Rear 8.0MP Wireless Wifi802.11b/g/n G-sensor…