CORVALLIS, Ore. – Inspired by the human brain, Oregon State University researchers have developed a new light-sensitive device that combines sensing and memory while controlling how digital memories s...

SoftBank's subsidiary SaiMemory teams up with Intel to develop ZAM memory, winning a subsidy from Japan's NEDO. The low-power HBM alternative is set to revolutionize AI workloads.

Researchers created a tiny memory device that improves as it gets smaller, breaking a key limitation in electronics. This could lead to longer battery life and more energy-efficient devices.

The Memristor market is projected to grow from USD Billion 0.5937 in 2024 to USD Billion 12.51 by 2035, at a CAGR of 31.93% during 2025-2035.

The Magneto resistive RAM (MRAM) market is projected to grow from USD Billion 0.55 in 2024 to USD Billion 2.863 by 2035, at a CAGR of 16.18% during 2025-2035.

The ECC Memory market is projected to grow from USD Billion 3.304 in 2024 to USD Billion 6.667 by 2035, at a CAGR of 6.59% during 2025-2035.

The Hybrid Memory Cube High-Bandwidth Memory market is projected to grow from USD Billion 217.57 in 2024 to USD Billion 4499.04 by 2035, at a CAGR of 31.7% during 2025-2035.

Mobile DRAM Market is predicted to hit USD 765.35 Billion at a CAGR of 20.22% by 2035, Global Mobile DRAM Market Growth by Type, Application | Mobile DRAM Industry

Magneto Resistive RAM Market is predicted to reach USD 2.86 Billion at a CAGR of 16.18% by 2035, Global MRAM Market Growth by Product, Application, and Region | Magneto Resistive RAM Industry

LPDDR6 standard finalized for mobile and AI first deploymentsMemory brings faster speed better efficiency and added security featuresDesktop systems expected to follow mobile and embedded device rollouts...

SK hynix revealed that Intel's upcoming Xeon 'Diamond Rapids' CPUs will adopt 2nd Gen MRDIMMs and its next-generation Gaudi AI accelerator 'Jaguar Shores' will feature SK hynix HBM4 memory.

A modest beginning with massive growth over 25 yearsOver 12 billion SD and microSD cards have been sold across consumer and industrial devicesSD Express cards now reach speeds of 4GB/s, up from just 12.5MB/s...

FMC and Neumonda develop non-volatile FeRAM products, revive memory production in Germany.

Micron's 1γ fabrication technology with EUV, new HKMG, and BEOL promises to increase performance while cutting power consumption for DRAM.

Sandisk says 3D Matrix Memory will be an affordable replacement for DRAMWill deliver DRAM-like performance at 4x the capacity and half the cost Sandisk says it will become more affordable as the technology...

A hidden electron shortcut inside new memory devices could revolutionize AI by making systems faster, more energy-efficient, and more reliable than ever before.

The crisis in the RAM market is not over, but the largest manufacturers are already preparing for the next stage. While consumers are struggling to find affordable DDR5, DDR4, and now even DDR3 modules, companies are already working on the new DDR6 standard. Samsung, SK Hynix, and Micron have reportedly begun the early stages of […] Post Next-gen memory: Samsung, SK Hynix, and Micron begin DDR6 development at Root-Nation.com.

Samsung has unveiled a breakthrough ferroelectric transistor (FeFET) memory technology capable of boosting storage capacity while cutting energy consumption